Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN
نویسندگان
چکیده
We describe 5 μm squircle InGaN-based red, green, and blue (RGB) monochromatic micro-light-emitting diodes (μLEDs) with an interpitch of 4 by pixilation conductive p-GaN using a H 2 -plasma treatment. The was passivated id="m2"> plasma prevented the current’s injection into InGaN quantum wells below. observed that red μLEDs exhibited broader full width at half-maximum larger peak wavelength blueshift id="m3"> 11.5 – 115 mathvariant="normal">A / mathvariant="normal">cm than green/blue μLEDs. on-wafer light output power density 632 nm id="m4"> approximately id="m5"> 936 mW/ , highest value reported thus far for This comparable id="m6"> indicating can satisfy requirement high brightness levels specific displays. color gamut based on RGB covered 83.7% to 75.9% Rec. 2020 space in CIE 1931 diagram 11.5 id="m7"> .
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ژورنال
عنوان ژورنال: Photonics Research
سال: 2021
ISSN: ['2327-9125']
DOI: https://doi.org/10.1364/prj.439741